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vishay siliconix SI4823DY document number: 64715 s10-1051-rev. c, 03-may-10 www.vishay.com 1 p-channel 20 v (d-s) mosfet with schottky diode product summary v ds (v) r ds(on) ( )i d (a) d q g (typ.) - 20 0.108 at v gs = - 4.5 v - 4.1 4 nc 0.175 at v gs = - 2.5 v - 3.3 schottky product summary v ka (v) v f (v) diode forward voltage i f (a) a 30 0.5 at 1 a 2 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage (mosfet) v ds - 20 v reverse voltage (schottky) v ka 30 gate-source voltage (mosfet) v gs 12 continuous drain current (t j = 150 c) (mosfet) t c = 25 c i d - 4.1 a t c = 70 c - 3.3 t a = 25 c - 3.3 b, c t a = 70 c - 2.6 b, c pulsed drain current (mosfet) i dm - 15 continuous source-drain diode current (mosfet diode conduction) t c = 25 c i s - 2.3 t a = 25 c - 1.4 b, c average forward current (schottky) i f - 2 b pulsed forward current (mosfet) i fm - 3 maximum power dissipation (mosfet) t c = 25 c p d 2.8 w t c = 70 c 1.8 t a = 25 c 1.7 b, c t a = 70 c 1.1 b, c maximum power dissi pation (schottky) t c = 25 c 2.7 t c = 70 c 1.7 t a = 25 c 1.6 b, c t a = 70 c 1.0 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c k a s g d p-channel mosfet ak ak sd gd so- 8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: si4 8 23dy-t1-e3 (lead (p b )-free) si4 8 23dy-t1-ge3 (lead (p b )-free and halogen-free) features ? halogen-free according to iec 61249-2-21 definition ? little foot ? plus schottky ? 100 % r g te s t e d ? compliant to rohs directive 2002/95/ec applications ? portable devices - ideal for boost circuits - ideal for book circuits
www.vishay.com 2 document number: 64715 s10-1051-rev. c, 03-may-10 vishay siliconix SI4823DY notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. based on t c = 25 c. e. maximum under steady state conditions is 110 c/w. f. maximum under steady state conditions is 115 c/w. notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) b, e r thja 60 71.5 c/w maximum junction-to-foot (drain) (mosfet) r thjf 35 45 maximum junction-to-ambient (schottky) b, f r thja 63 78 maximum junction-to-foot (drain) (schottky) r thjf 39 47 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 20 mv/c v gs(th) temperature coefficient v gs(th) /t j 3 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 - 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds 5 v, v gs = - 4.5 v - 15 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 3.3 a 0.090 0.108 v gs = - 2.5 v, i d = - 2.6 a 0.140 0.175 forward transconductance a g fs v ds = - 10 v, i d = - 3.3 a 6 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 330 660 pf output capacitance c oss 80 160 reverse transfer capacitance c rss 57 114 total gate charge q g v ds = - 10 v, v gs = - 10 v, i d = - 3.3 a 8 12 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 3.3 a 46 gate-source charge q gs 0.8 gate-drain charge q gd 1.4 gate resistance r g f = 1 mhz 1.2 6 12 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 3.8 i d ? - 2.6 a, v gen = - 10 v, r g = 1 36 ns rise time t r 10 20 turn-off delaytime t d(off) 16 24 fall time t f 815 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 3.8 i d ? - 2.6 a, v gen = - 4.5 v, r g = 1 18 27 rise time t r 40 60 turn-off delaytime t d(off) 18 27 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 6.2 a pulse diode forward current i sm - 15 body diode voltage v sd i s = - 2.6 a, v gs = 0 v - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 2.6 a, di/dt = 100 a/s, t j = 25 c 23 35 ns body diode reverse recovery charge q rr 14 21 nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 12
document number: 64715 s10-1051-rev. c, 03-may-10 www.vishay.com 3 vishay siliconix SI4823DY stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. mosfet typical characteristics t a = 25 c, unless otherwise noted schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 1 a 0.46 0.50 v i f = 1 a, t j = 125 c 0.41 0.50 maximum reverse leakage current i rm v r = 30 v 0.025 0.1 ma v r = 30 v, t j = 85 c 0.6 6 v r = 30 v, t j = 125 c 5 25 junction capacitance c t v r = 15 v 35 pf output characteristics on-resistance vs. drain current and gate voltage 0 3 6 9 12 15 012345 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u 4 v v gs =2 v v gs =3 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.04 0.0 8 0.12 0.16 0.20 0 3 6 9 12 15 v gs =2.5 v v gs =4.5 v transfer characteristics capacitance 0.0 0.4 0. 8 1.2 1.6 2.0 0.0 0.4 0. 8 1.2 1.6 2.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 125 c t c = 25 c t c = - 55 c c rss 0 100 200 300 400 500 600 04 8 12 16 20 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss
www.vishay.com 4 document number: 64715 s10-1051-rev. c, 03-may-10 vishay siliconix SI4823DY mosfet typical characteristics t a = 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 10 0.0 1.5 3.0 4.5 6.0 7.5 9.0 i d = 3.3 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 16 v v ds =10 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c 1 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.1 10 t j = 25 c 0.5 0.7 0.9 1.1 1.3 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ( v ) gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) v gs = 4.5 v , i d = 2.6 a v gs = 10 v , i d = 3.3 a 0.00 0.04 0.0 8 0.12 0.16 0.20 036912 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d = 3.3 a 0 30 50 10 20 po w er ( w ) time (s) 40 110 0.1 0.01 0.001
document number: 64715 s10-1051-rev. c, 03-may-10 www.vishay.com 5 vishay siliconix SI4823DY mosfet typical characteristics t a = 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for case s where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a =25 c single p u lse limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms 1s 10 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d current derating* power derating, junction-to-ambient 0 1 2 3 4 5 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) 0.00 0.25 0.50 0.75 1.00 1.25 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w ) power derating, junction-to-case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 64715 s10-1051-rev. c, 03-may-10 vishay siliconix SI4823DY mosfet typical characteristics t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 120 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
vishay siliconix SI4823DY document number: 64715 s10-1051-rev. c, 03-may-10 www.vishay.com 7 schottky typical characteristics t a = 25 c, unless otherwise noted reverse current vs. junction temperature 10 -5 10 -4 10 -3 10 -2 10 -1 1 - 50 - 25 0 25 50 t j - j u nction temperat u re (c) i r - re v erse c u rrent (ma) 150 125 100 75 100 10 v r = 30 v v r = 10 v forward voltage drop 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j = 150 c 1 v f - for w ard v oltage drop ( v ) - for w ard c u rrent (a) i f 0.1 10 t j = 25 c capacitance 0 50 100 150 200 250 0 5 10 15 20 25 30 v ds - drain-to-so u rce v oltage ( v ) - j u nction capacitance (pf) c t
www.vishay.com 8 document number: 64715 s10-1051-rev. c, 03-may-10 vishay siliconix SI4823DY schottky typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64715 . normalized thermal transient impedance, junction-to-ambient t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 92 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted 10 -3 10 -2 1 10 1000 10 -1 10 -4 1 0.1 0.01 sq u are w a v e p u lse d u ration (s) 100 t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 1 10 -1 10 -4 1 0.1 0.01 sq u are w a v e p u lse d u ration (s) e v i t c e f f e d e z i l a m r o n t n e i s n a r t e c n a d e p m i l a m r e h t 10 100 0.02 0.05 0.05 0.02 d u ty cycle = 0.5 0.1
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
vishay siliconix trenchfet ? power mosfets application note 808 mounting little foot ? , so-8 power mosfets application note document number: 70740 www.vishay.com revision: 18-jun-07 1 wharton mcdaniel surface-mounted little foot power mosfets use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. leadframe materials and design, molding compounds, and die attach materials have been changed, while the footpr int of the packages remains the same. see application note 826, recommended minimum pad patterns with outline drawin g access for vishay siliconix mosfets, ( http://www.vishay.com/ppg?72286 ), for the basis of the pad design for a little foot so-8 power mosfet. in converting this recommended minimum pad to the pad set for a power mosfet, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. in the case of the so-8 p ackage, the thermal connections are very simple. pins 5, 6, 7, and 8 are the drain of the mosfet for a single mosfet package and are connected together. in a dual package, pi ns 5 and 6 are one drain, and pins 7 and 8 are the other drain. for a small-signal device or integrated circuit, typical co nnections would be made with traces that are 0.020 inches wi de. since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. the total cross section of the copp er may be adequate to carry the current required for the a pplication, but it presents a large thermal impedance. also , heat spreads in a circular fashion from the heat source. in this case the drain pins are the heat sources wh en looking at heat spread on the pc board. figure 1. single mosfet so-8 pad pattern with copper spreading figure 2. dual mosfet so-8 pad pattern with copper spreading the minimum recommended pad patterns for the single-mosfet so-8 with copp er spreading (figure 1) and dual-mosfet so-8 with copper spreading (figure 2) show the starting point for utilizing th e board area available for the heat-spreading copper. to creat e this pattern, a plane of copper overlies the drain pins . the copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat fr om the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. these patterns use all the available area underneath the body for this purpose. since surface-mounted packag es are small, and reflow soldering is the most comm on way in which these are affixed to the pc board, ?t hermal? connections from the planar copper to the pads have not been used. even if additional planar copper area is used, there should be no problems in the soldering process. the actual solder connections are defined by the solder mask openings. by combining the basic footprint wi th the copper plane on the drain pins, the solder mask ge neration occurs automatically. a final item to keep in mind is the width of the power traces. the absolute minimum pow er trace width must be determined by the amount of current it has to carry. for thermal reasons, this minimum width should be at least 0.020 inches. the use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. 0.027 0.69 0.07 8 1.9 8 0.2 5.07 0.196 5.0 0.2 88 7.3 0.050 1.27 0.027 0.69 0.07 8 1.9 8 0.2 5.07 0.0 88 2.25 0.2 88 7.3 0.050 1.27 0.0 88 2.25
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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